/*
- * Mem setup common file for different types of DDR present on SMDK5250 boards.
+ * Mem setup common file for different types of DDR present on Exynos boards.
*
* Copyright (C) 2012 Samsung Electronics
*
#define ZQ_INIT_TIMEOUT 10000
-int dmc_config_zq(struct mem_timings *mem,
- struct exynos5_phy_control *phy0_ctrl,
- struct exynos5_phy_control *phy1_ctrl)
+int dmc_config_zq(struct mem_timings *mem, uint32_t *phy0_con16,
+ uint32_t *phy1_con16, uint32_t *phy0_con17,
+ uint32_t *phy1_con17)
{
unsigned long val = 0;
int i;
val |= mem->zq_mode_dds << PHY_CON16_ZQ_MODE_DDS_SHIFT;
val |= mem->zq_mode_term << PHY_CON16_ZQ_MODE_TERM_SHIFT;
val |= ZQ_CLK_DIV_EN;
- writel(val, &phy0_ctrl->phy_con16);
- writel(val, &phy1_ctrl->phy_con16);
+ writel(val, phy0_con16);
+ writel(val, phy1_con16);
/* Disable termination */
if (mem->zq_mode_noterm)
val |= PHY_CON16_ZQ_MODE_NOTERM_MASK;
- writel(val, &phy0_ctrl->phy_con16);
- writel(val, &phy1_ctrl->phy_con16);
+ writel(val, phy0_con16);
+ writel(val, phy1_con16);
/* ZQ_MANUAL_START: Enable */
val |= ZQ_MANUAL_STR;
- writel(val, &phy0_ctrl->phy_con16);
- writel(val, &phy1_ctrl->phy_con16);
+ writel(val, phy0_con16);
+ writel(val, phy1_con16);
/* ZQ_MANUAL_START: Disable */
val &= ~ZQ_MANUAL_STR;
* we are looping for the ZQ_init to complete.
*/
i = ZQ_INIT_TIMEOUT;
- while ((readl(&phy0_ctrl->phy_con17) & ZQ_DONE) != ZQ_DONE && i > 0) {
+ while ((readl(phy0_con17) & ZQ_DONE) != ZQ_DONE && i > 0) {
sdelay(100);
i--;
}
if (!i)
return -1;
- writel(val, &phy0_ctrl->phy_con16);
+ writel(val, phy0_con16);
i = ZQ_INIT_TIMEOUT;
- while ((readl(&phy1_ctrl->phy_con17) & ZQ_DONE) != ZQ_DONE && i > 0) {
+ while ((readl(phy1_con17) & ZQ_DONE) != ZQ_DONE && i > 0) {
sdelay(100);
i--;
}
if (!i)
return -1;
- writel(val, &phy1_ctrl->phy_con16);
+ writel(val, phy1_con16);
return 0;
}
-void update_reset_dll(struct exynos5_dmc *dmc, enum ddr_mode mode)
+void update_reset_dll(uint32_t *phycontrol0, enum ddr_mode mode)
{
unsigned long val;
if (mode == DDR_MODE_DDR3) {
val = MEM_TERM_EN | PHY_TERM_EN | DMC_CTRL_SHGATE;
- writel(val, &dmc->phycontrol0);
+ writel(val, phycontrol0);
}
/* Update DLL Information: Force DLL Resyncronization */
- val = readl(&dmc->phycontrol0);
+ val = readl(phycontrol0);
val |= FP_RSYNC;
- writel(val, &dmc->phycontrol0);
+ writel(val, phycontrol0);
/* Reset Force DLL Resyncronization */
- val = readl(&dmc->phycontrol0);
+ val = readl(phycontrol0);
val &= ~FP_RSYNC;
- writel(val, &dmc->phycontrol0);
+ writel(val, phycontrol0);
}
-void dmc_config_mrs(struct mem_timings *mem, struct exynos5_dmc *dmc)
+void dmc_config_mrs(struct mem_timings *mem, uint32_t *directcmd)
{
int channel, chip;
mask |= chip << DIRECT_CMD_CHIP_SHIFT;
/* Sending NOP command */
- writel(DIRECT_CMD_NOP | mask, &dmc->directcmd);
+ writel(DIRECT_CMD_NOP | mask, directcmd);
/*
* TODO(alim.akhtar@samsung.com): Do we need these
/* Sending EMRS/MRS commands */
for (i = 0; i < MEM_TIMINGS_MSR_COUNT; i++) {
writel(mem->direct_cmd_msr[i] | mask,
- &dmc->directcmd);
+ directcmd);
sdelay(0x10000);
}
if (mem->send_zq_init) {
/* Sending ZQINIT command */
writel(DIRECT_CMD_ZQINIT | mask,
- &dmc->directcmd);
+ directcmd);
sdelay(10000);
}
}
}
-void dmc_config_prech(struct mem_timings *mem, struct exynos5_dmc *dmc)
+void dmc_config_prech(struct mem_timings *mem, uint32_t *directcmd)
{
int channel, chip;
mask |= chip << DIRECT_CMD_CHIP_SHIFT;
/* PALL (all banks precharge) CMD */
- writel(DIRECT_CMD_PALL | mask, &dmc->directcmd);
+ writel(DIRECT_CMD_PALL | mask, directcmd);
sdelay(0x10000);
}
}
}
-void dmc_config_memory(struct mem_timings *mem, struct exynos5_dmc *dmc)
-{
- writel(mem->memconfig, &dmc->memconfig0);
- writel(mem->memconfig, &dmc->memconfig1);
- writel(DMC_MEMBASECONFIG0_VAL, &dmc->membaseconfig0);
- writel(DMC_MEMBASECONFIG1_VAL, &dmc->membaseconfig1);
-}
-
void mem_ctrl_init(int reset)
{
struct spl_machine_param *param = spl_get_machine_params();
/*
- * DDR3 mem setup file for SMDK5250 board based on EXYNOS5
+ * DDR3 mem setup file for board based on EXYNOS5
*
* Copyright (C) 2012 Samsung Electronics
*
#include <asm/arch/clock.h>
#include <asm/arch/cpu.h>
#include <asm/arch/dmc.h>
+#include <asm/arch/power.h>
#include "common_setup.h"
#include "exynos5_setup.h"
#include "clock_init.h"
-#define RDLVL_COMPLETE_TIMEOUT 10000
+#define TIMEOUT 10000
+#ifdef CONFIG_EXYNOS5250
static void reset_phy_ctrl(void)
{
struct exynos5_clock *clk =
writel(val, &phy1_ctrl->phy_con42);
/* ZQ Calibration */
- if (dmc_config_zq(mem, phy0_ctrl, phy1_ctrl))
+ if (dmc_config_zq(mem, &phy0_ctrl->phy_con16, &phy1_ctrl->phy_con16,
+ &phy0_ctrl->phy_con17, &phy1_ctrl->phy_con17))
return SETUP_ERR_ZQ_CALIBRATION_FAILURE;
/* DQ Signal */
| (mem->dfi_init_start << CONCONTROL_DFI_INIT_START_SHIFT),
&dmc->concontrol);
- update_reset_dll(dmc, DDR_MODE_DDR3);
+ update_reset_dll(&dmc->phycontrol0, DDR_MODE_DDR3);
/* DQS Signal */
writel(mem->phy0_dqs, &phy0_ctrl->phy_con4);
writel(val | (mem->ctrl_start << PHY_CON12_CTRL_START_SHIFT),
&phy1_ctrl->phy_con12);
- update_reset_dll(dmc, DDR_MODE_DDR3);
+ update_reset_dll(&dmc->phycontrol0, DDR_MODE_DDR3);
writel(mem->concontrol | (mem->rd_fetch << CONCONTROL_RD_FETCH_SHIFT),
&dmc->concontrol);
writel(mem->timing_power, &dmc->timingpower);
/* Send PALL command */
- dmc_config_prech(mem, dmc);
+ dmc_config_prech(mem, &dmc->directcmd);
/* Send NOP, MRS and ZQINIT commands */
- dmc_config_mrs(mem, dmc);
+ dmc_config_mrs(mem, &dmc->directcmd);
if (mem->gate_leveling_enable) {
val = PHY_CON0_RESET_VAL;
writel(val, &phy1_ctrl->phy_con1);
writel(CTRL_RDLVL_GATE_ENABLE, &dmc->rdlvl_config);
- i = RDLVL_COMPLETE_TIMEOUT;
+ i = TIMEOUT;
while ((readl(&dmc->phystatus) &
(RDLVL_COMPLETE_CHO | RDLVL_COMPLETE_CH1)) !=
(RDLVL_COMPLETE_CHO | RDLVL_COMPLETE_CH1) && i > 0) {
writel(val, &phy0_ctrl->phy_con12);
writel(val, &phy1_ctrl->phy_con12);
- update_reset_dll(dmc, DDR_MODE_DDR3);
+ update_reset_dll(&dmc->phycontrol0, DDR_MODE_DDR3);
}
/* Send PALL command */
- dmc_config_prech(mem, dmc);
+ dmc_config_prech(mem, &dmc->directcmd);
writel(mem->memcontrol, &dmc->memcontrol);
| (mem->aref_en << CONCONTROL_AREF_EN_SHIFT), &dmc->concontrol);
return 0;
}
+#endif
+
+#ifdef CONFIG_EXYNOS5420
+int ddr3_mem_ctrl_init(struct mem_timings *mem, unsigned long mem_iv_size,
+ int reset)
+{
+ struct exynos5420_clock *clk =
+ (struct exynos5420_clock *)samsung_get_base_clock();
+ struct exynos5420_power *power =
+ (struct exynos5420_power *)samsung_get_base_power();
+ struct exynos5420_phy_control *phy0_ctrl, *phy1_ctrl;
+ struct exynos5420_dmc *drex0, *drex1;
+ struct exynos5420_tzasc *tzasc0, *tzasc1;
+ uint32_t val, n_lock_r, n_lock_w_phy0, n_lock_w_phy1;
+ int chip;
+ int i;
+
+ phy0_ctrl = (struct exynos5420_phy_control *)samsung_get_base_dmc_phy();
+ phy1_ctrl = (struct exynos5420_phy_control *)(samsung_get_base_dmc_phy()
+ + DMC_OFFSET);
+ drex0 = (struct exynos5420_dmc *)samsung_get_base_dmc_ctrl();
+ drex1 = (struct exynos5420_dmc *)(samsung_get_base_dmc_ctrl()
+ + DMC_OFFSET);
+ tzasc0 = (struct exynos5420_tzasc *)samsung_get_base_dmc_tzasc();
+ tzasc1 = (struct exynos5420_tzasc *)(samsung_get_base_dmc_tzasc()
+ + DMC_OFFSET);
+
+ /* Enable PAUSE for DREX */
+ setbits_le32(&clk->pause, ENABLE_BIT);
+
+ /* Enable BYPASS mode */
+ setbits_le32(&clk->bpll_con1, BYPASS_EN);
+
+ writel(MUX_BPLL_SEL_FOUTBPLL, &clk->src_cdrex);
+ do {
+ val = readl(&clk->mux_stat_cdrex);
+ val &= BPLL_SEL_MASK;
+ } while (val != FOUTBPLL);
+
+ clrbits_le32(&clk->bpll_con1, BYPASS_EN);
+
+ /* Specify the DDR memory type as DDR3 */
+ val = readl(&phy0_ctrl->phy_con0);
+ val &= ~(PHY_CON0_CTRL_DDR_MODE_MASK << PHY_CON0_CTRL_DDR_MODE_SHIFT);
+ val |= (DDR_MODE_DDR3 << PHY_CON0_CTRL_DDR_MODE_SHIFT);
+ writel(val, &phy0_ctrl->phy_con0);
+
+ val = readl(&phy1_ctrl->phy_con0);
+ val &= ~(PHY_CON0_CTRL_DDR_MODE_MASK << PHY_CON0_CTRL_DDR_MODE_SHIFT);
+ val |= (DDR_MODE_DDR3 << PHY_CON0_CTRL_DDR_MODE_SHIFT);
+ writel(val, &phy1_ctrl->phy_con0);
+
+ /* Set Read Latency and Burst Length for PHY0 and PHY1 */
+ val = (mem->ctrl_bstlen << PHY_CON42_CTRL_BSTLEN_SHIFT) |
+ (mem->ctrl_rdlat << PHY_CON42_CTRL_RDLAT_SHIFT);
+ writel(val, &phy0_ctrl->phy_con42);
+ writel(val, &phy1_ctrl->phy_con42);
+
+ val = readl(&phy0_ctrl->phy_con26);
+ val &= ~(T_WRDATA_EN_MASK << T_WRDATA_EN_OFFSET);
+ val |= (T_WRDATA_EN_DDR3 << T_WRDATA_EN_OFFSET);
+ writel(val, &phy0_ctrl->phy_con26);
+
+ val = readl(&phy1_ctrl->phy_con26);
+ val &= ~(T_WRDATA_EN_MASK << T_WRDATA_EN_OFFSET);
+ val |= (T_WRDATA_EN_DDR3 << T_WRDATA_EN_OFFSET);
+ writel(val, &phy1_ctrl->phy_con26);
+
+ /*
+ * Set Driver strength for CK, CKE, CS & CA to 0x7
+ * Set Driver strength for Data Slice 0~3 to 0x7
+ */
+ val = (0x7 << CA_CK_DRVR_DS_OFFSET) | (0x7 << CA_CKE_DRVR_DS_OFFSET) |
+ (0x7 << CA_CS_DRVR_DS_OFFSET) | (0x7 << CA_ADR_DRVR_DS_OFFSET);
+ val |= (0x7 << DA_3_DS_OFFSET) | (0x7 << DA_2_DS_OFFSET) |
+ (0x7 << DA_1_DS_OFFSET) | (0x7 << DA_0_DS_OFFSET);
+ writel(val, &phy0_ctrl->phy_con39);
+ writel(val, &phy1_ctrl->phy_con39);
+
+ /* ZQ Calibration */
+ if (dmc_config_zq(mem, &phy0_ctrl->phy_con16, &phy1_ctrl->phy_con16,
+ &phy0_ctrl->phy_con17, &phy1_ctrl->phy_con17))
+ return SETUP_ERR_ZQ_CALIBRATION_FAILURE;
+
+ clrbits_le32(&phy0_ctrl->phy_con16, ZQ_CLK_DIV_EN);
+ clrbits_le32(&phy1_ctrl->phy_con16, ZQ_CLK_DIV_EN);
+
+ /* DQ Signal */
+ val = readl(&phy0_ctrl->phy_con14);
+ val |= mem->phy0_pulld_dqs;
+ writel(val, &phy0_ctrl->phy_con14);
+ val = readl(&phy1_ctrl->phy_con14);
+ val |= mem->phy1_pulld_dqs;
+ writel(val, &phy1_ctrl->phy_con14);
+
+ val = MEM_TERM_EN | PHY_TERM_EN;
+ writel(val, &drex0->phycontrol0);
+ writel(val, &drex1->phycontrol0);
+
+ writel(mem->concontrol |
+ (mem->dfi_init_start << CONCONTROL_DFI_INIT_START_SHIFT) |
+ (mem->rd_fetch << CONCONTROL_RD_FETCH_SHIFT),
+ &drex0->concontrol);
+ writel(mem->concontrol |
+ (mem->dfi_init_start << CONCONTROL_DFI_INIT_START_SHIFT) |
+ (mem->rd_fetch << CONCONTROL_RD_FETCH_SHIFT),
+ &drex1->concontrol);
+
+ do {
+ val = readl(&drex0->phystatus);
+ } while ((val & DFI_INIT_COMPLETE) != DFI_INIT_COMPLETE);
+ do {
+ val = readl(&drex1->phystatus);
+ } while ((val & DFI_INIT_COMPLETE) != DFI_INIT_COMPLETE);
+
+ clrbits_le32(&drex0->concontrol, DFI_INIT_START);
+ clrbits_le32(&drex1->concontrol, DFI_INIT_START);
+
+ update_reset_dll(&drex0->phycontrol0, DDR_MODE_DDR3);
+ update_reset_dll(&drex1->phycontrol0, DDR_MODE_DDR3);
+
+ /*
+ * Set Base Address:
+ * 0x2000_0000 ~ 0x5FFF_FFFF
+ * 0x6000_0000 ~ 0x9FFF_FFFF
+ */
+ /* MEMBASECONFIG0 */
+ val = DMC_MEMBASECONFIGX_CHIP_BASE(DMC_CHIP_BASE_0) |
+ DMC_MEMBASECONFIGX_CHIP_MASK(DMC_CHIP_MASK);
+ writel(val, &tzasc0->membaseconfig0);
+ writel(val, &tzasc1->membaseconfig0);
+
+ /* MEMBASECONFIG1 */
+ val = DMC_MEMBASECONFIGX_CHIP_BASE(DMC_CHIP_BASE_1) |
+ DMC_MEMBASECONFIGX_CHIP_MASK(DMC_CHIP_MASK);
+ writel(val, &tzasc0->membaseconfig1);
+ writel(val, &tzasc1->membaseconfig1);
+
+ /*
+ * Memory Channel Inteleaving Size
+ * Ares Channel interleaving = 128 bytes
+ */
+ /* MEMCONFIG0/1 */
+ writel(mem->memconfig, &tzasc0->memconfig0);
+ writel(mem->memconfig, &tzasc1->memconfig0);
+ writel(mem->memconfig, &tzasc0->memconfig1);
+ writel(mem->memconfig, &tzasc1->memconfig1);
+
+ /* Precharge Configuration */
+ writel(mem->prechconfig_tp_cnt << PRECHCONFIG_TP_CNT_SHIFT,
+ &drex0->prechconfig0);
+ writel(mem->prechconfig_tp_cnt << PRECHCONFIG_TP_CNT_SHIFT,
+ &drex1->prechconfig0);
+
+ /*
+ * TimingRow, TimingData, TimingPower and Timingaref
+ * values as per Memory AC parameters
+ */
+ writel(mem->timing_ref, &drex0->timingref);
+ writel(mem->timing_ref, &drex1->timingref);
+ writel(mem->timing_row, &drex0->timingrow0);
+ writel(mem->timing_row, &drex1->timingrow0);
+ writel(mem->timing_data, &drex0->timingdata0);
+ writel(mem->timing_data, &drex1->timingdata0);
+ writel(mem->timing_power, &drex0->timingpower0);
+ writel(mem->timing_power, &drex1->timingpower0);
+
+ if (reset) {
+ /*
+ * Send NOP, MRS and ZQINIT commands
+ * Sending MRS command will reset the DRAM. We should not be
+ * reseting the DRAM after resume, this will lead to memory
+ * corruption as DRAM content is lost after DRAM reset
+ */
+ dmc_config_mrs(mem, &drex0->directcmd);
+ dmc_config_mrs(mem, &drex1->directcmd);
+ } else {
+ /*
+ * During Suspend-Resume & S/W-Reset, as soon as PMU releases
+ * pad retention, CKE goes high. This causes memory contents
+ * not to be retained during DRAM initialization. Therfore,
+ * there is a new control register(0x100431e8[28]) which lets us
+ * release pad retention and retain the memory content until the
+ * initialization is complete.
+ */
+ writel(PAD_RETENTION_DRAM_COREBLK_VAL,
+ &power->pad_retention_dram_coreblk_option);
+ do {
+ val = readl(&power->pad_retention_dram_status);
+ } while (val != 0x1);
+
+ /*
+ * CKE PAD retention disables DRAM self-refresh mode.
+ * Send auto refresh command for DRAM refresh.
+ */
+ for (i = 0; i < 128; i++) {
+ for (chip = 0; chip < mem->chips_to_configure; chip++) {
+ writel(DIRECT_CMD_REFA |
+ (chip << DIRECT_CMD_CHIP_SHIFT),
+ &drex0->directcmd);
+ writel(DIRECT_CMD_REFA |
+ (chip << DIRECT_CMD_CHIP_SHIFT),
+ &drex1->directcmd);
+ }
+ }
+ }
+
+ if (mem->gate_leveling_enable) {
+ writel(PHY_CON0_RESET_VAL, &phy0_ctrl->phy_con0);
+ writel(PHY_CON0_RESET_VAL, &phy1_ctrl->phy_con0);
+
+ setbits_le32(&phy0_ctrl->phy_con0, P0_CMD_EN);
+ setbits_le32(&phy1_ctrl->phy_con0, P0_CMD_EN);
+
+ val = PHY_CON2_RESET_VAL;
+ val |= INIT_DESKEW_EN;
+ writel(val, &phy0_ctrl->phy_con2);
+ writel(val, &phy1_ctrl->phy_con2);
+
+ val = readl(&phy0_ctrl->phy_con1);
+ val |= (RDLVL_PASS_ADJ_VAL << RDLVL_PASS_ADJ_OFFSET);
+ writel(val, &phy0_ctrl->phy_con1);
+
+ val = readl(&phy1_ctrl->phy_con1);
+ val |= (RDLVL_PASS_ADJ_VAL << RDLVL_PASS_ADJ_OFFSET);
+ writel(val, &phy1_ctrl->phy_con1);
+
+ n_lock_r = readl(&phy0_ctrl->phy_con13);
+ n_lock_w_phy0 = (n_lock_r & CTRL_LOCK_COARSE_MASK) >> 2;
+ n_lock_r = readl(&phy0_ctrl->phy_con12);
+ n_lock_r &= ~CTRL_DLL_ON;
+ n_lock_r |= n_lock_w_phy0;
+ writel(n_lock_r, &phy0_ctrl->phy_con12);
+
+ n_lock_r = readl(&phy1_ctrl->phy_con13);
+ n_lock_w_phy1 = (n_lock_r & CTRL_LOCK_COARSE_MASK) >> 2;
+ n_lock_r = readl(&phy1_ctrl->phy_con12);
+ n_lock_r &= ~CTRL_DLL_ON;
+ n_lock_r |= n_lock_w_phy1;
+ writel(n_lock_r, &phy1_ctrl->phy_con12);
+
+ val = (0x3 << DIRECT_CMD_BANK_SHIFT) | 0x4;
+ for (chip = 0; chip < mem->chips_to_configure; chip++) {
+ writel(val | (chip << DIRECT_CMD_CHIP_SHIFT),
+ &drex0->directcmd);
+ writel(val | (chip << DIRECT_CMD_CHIP_SHIFT),
+ &drex1->directcmd);
+ }
+
+ setbits_le32(&phy0_ctrl->phy_con2, RDLVL_GATE_EN);
+ setbits_le32(&phy1_ctrl->phy_con2, RDLVL_GATE_EN);
+
+ setbits_le32(&phy0_ctrl->phy_con0, CTRL_SHGATE);
+ setbits_le32(&phy1_ctrl->phy_con0, CTRL_SHGATE);
+
+ val = readl(&phy0_ctrl->phy_con1);
+ val &= ~(CTRL_GATEDURADJ_MASK);
+ writel(val, &phy0_ctrl->phy_con1);
+
+ val = readl(&phy1_ctrl->phy_con1);
+ val &= ~(CTRL_GATEDURADJ_MASK);
+ writel(val, &phy1_ctrl->phy_con1);
+
+ writel(CTRL_RDLVL_GATE_ENABLE, &drex0->rdlvl_config);
+ i = TIMEOUT;
+ while (((readl(&drex0->phystatus) & RDLVL_COMPLETE_CHO) !=
+ RDLVL_COMPLETE_CHO) && (i > 0)) {
+ /*
+ * TODO(waihong): Comment on how long this take to
+ * timeout
+ */
+ sdelay(100);
+ i--;
+ }
+ if (!i)
+ return SETUP_ERR_RDLV_COMPLETE_TIMEOUT;
+ writel(CTRL_RDLVL_GATE_DISABLE, &drex0->rdlvl_config);
+
+ writel(CTRL_RDLVL_GATE_ENABLE, &drex1->rdlvl_config);
+ i = TIMEOUT;
+ while (((readl(&drex1->phystatus) & RDLVL_COMPLETE_CHO) !=
+ RDLVL_COMPLETE_CHO) && (i > 0)) {
+ /*
+ * TODO(waihong): Comment on how long this take to
+ * timeout
+ */
+ sdelay(100);
+ i--;
+ }
+ if (!i)
+ return SETUP_ERR_RDLV_COMPLETE_TIMEOUT;
+ writel(CTRL_RDLVL_GATE_DISABLE, &drex1->rdlvl_config);
+
+ writel(0, &phy0_ctrl->phy_con14);
+ writel(0, &phy1_ctrl->phy_con14);
+
+ val = (0x3 << DIRECT_CMD_BANK_SHIFT);
+ for (chip = 0; chip < mem->chips_to_configure; chip++) {
+ writel(val | (chip << DIRECT_CMD_CHIP_SHIFT),
+ &drex0->directcmd);
+ writel(val | (chip << DIRECT_CMD_CHIP_SHIFT),
+ &drex1->directcmd);
+ }
+
+ if (mem->read_leveling_enable) {
+ /* Set Read DQ Calibration */
+ val = (0x3 << DIRECT_CMD_BANK_SHIFT) | 0x4;
+ for (chip = 0; chip < mem->chips_to_configure; chip++) {
+ writel(val | (chip << DIRECT_CMD_CHIP_SHIFT),
+ &drex0->directcmd);
+ writel(val | (chip << DIRECT_CMD_CHIP_SHIFT),
+ &drex1->directcmd);
+ }
+
+ val = readl(&phy0_ctrl->phy_con1);
+ val |= READ_LEVELLING_DDR3;
+ writel(val, &phy0_ctrl->phy_con1);
+ val = readl(&phy1_ctrl->phy_con1);
+ val |= READ_LEVELLING_DDR3;
+ writel(val, &phy1_ctrl->phy_con1);
+
+ val = readl(&phy0_ctrl->phy_con2);
+ val |= (RDLVL_EN | RDLVL_INCR_ADJ);
+ writel(val, &phy0_ctrl->phy_con2);
+ val = readl(&phy1_ctrl->phy_con2);
+ val |= (RDLVL_EN | RDLVL_INCR_ADJ);
+ writel(val, &phy1_ctrl->phy_con2);
+
+ setbits_le32(&drex0->rdlvl_config,
+ CTRL_RDLVL_DATA_ENABLE);
+ i = TIMEOUT;
+ while (((readl(&drex0->phystatus) & RDLVL_COMPLETE_CHO)
+ != RDLVL_COMPLETE_CHO) && (i > 0)) {
+ /*
+ * TODO(waihong): Comment on how long this take
+ * to timeout
+ */
+ sdelay(100);
+ i--;
+ }
+ if (!i)
+ return SETUP_ERR_RDLV_COMPLETE_TIMEOUT;
+
+ clrbits_le32(&drex0->rdlvl_config,
+ CTRL_RDLVL_DATA_ENABLE);
+ setbits_le32(&drex1->rdlvl_config,
+ CTRL_RDLVL_DATA_ENABLE);
+ i = TIMEOUT;
+ while (((readl(&drex1->phystatus) & RDLVL_COMPLETE_CHO)
+ != RDLVL_COMPLETE_CHO) && (i > 0)) {
+ /*
+ * TODO(waihong): Comment on how long this take
+ * to timeout
+ */
+ sdelay(100);
+ i--;
+ }
+ if (!i)
+ return SETUP_ERR_RDLV_COMPLETE_TIMEOUT;
+
+ clrbits_le32(&drex1->rdlvl_config,
+ CTRL_RDLVL_DATA_ENABLE);
+
+ val = (0x3 << DIRECT_CMD_BANK_SHIFT);
+ for (chip = 0; chip < mem->chips_to_configure; chip++) {
+ writel(val | (chip << DIRECT_CMD_CHIP_SHIFT),
+ &drex0->directcmd);
+ writel(val | (chip << DIRECT_CMD_CHIP_SHIFT),
+ &drex1->directcmd);
+ }
+
+ update_reset_dll(&drex0->phycontrol0, DDR_MODE_DDR3);
+ update_reset_dll(&drex1->phycontrol0, DDR_MODE_DDR3);
+ }
+
+ /* Common Settings for Leveling */
+ val = PHY_CON12_RESET_VAL;
+ writel((val + n_lock_w_phy0), &phy0_ctrl->phy_con12);
+ writel((val + n_lock_w_phy1), &phy1_ctrl->phy_con12);
+
+ setbits_le32(&phy0_ctrl->phy_con2, DLL_DESKEW_EN);
+ setbits_le32(&phy1_ctrl->phy_con2, DLL_DESKEW_EN);
+ }
+
+ /* Send PALL command */
+ dmc_config_prech(mem, &drex0->directcmd);
+ dmc_config_prech(mem, &drex1->directcmd);
+
+ writel(mem->memcontrol, &drex0->memcontrol);
+ writel(mem->memcontrol, &drex1->memcontrol);
+
+ /*
+ * Set DMC Concontrol: Enable auto-refresh counter, provide
+ * read data fetch cycles and enable DREX auto set powerdown
+ * for input buffer of I/O in none read memory state.
+ */
+ writel(mem->concontrol | (mem->aref_en << CONCONTROL_AREF_EN_SHIFT) |
+ (mem->rd_fetch << CONCONTROL_RD_FETCH_SHIFT)|
+ DMC_CONCONTROL_IO_PD_CON(0x2),
+ &drex0->concontrol);
+ writel(mem->concontrol | (mem->aref_en << CONCONTROL_AREF_EN_SHIFT) |
+ (mem->rd_fetch << CONCONTROL_RD_FETCH_SHIFT)|
+ DMC_CONCONTROL_IO_PD_CON(0x2),
+ &drex1->concontrol);
+
+ /*
+ * Enable Clock Gating Control for DMC
+ * this saves around 25 mw dmc power as compared to the power
+ * consumption without these bits enabled
+ */
+ setbits_le32(&drex0->cgcontrol, DMC_INTERNAL_CG);
+ setbits_le32(&drex1->cgcontrol, DMC_INTERNAL_CG);
+
+ return 0;
+}
+#endif
projects / karo-tx-uboot.git / commitdiff